JPH0579183B2 - - Google Patents

Info

Publication number
JPH0579183B2
JPH0579183B2 JP62088261A JP8826187A JPH0579183B2 JP H0579183 B2 JPH0579183 B2 JP H0579183B2 JP 62088261 A JP62088261 A JP 62088261A JP 8826187 A JP8826187 A JP 8826187A JP H0579183 B2 JPH0579183 B2 JP H0579183B2
Authority
JP
Japan
Prior art keywords
layer
resistance
metal layer
resistivity metal
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62088261A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63252458A (ja
Inventor
Hideyuki Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP62088261A priority Critical patent/JPS63252458A/ja
Publication of JPS63252458A publication Critical patent/JPS63252458A/ja
Publication of JPH0579183B2 publication Critical patent/JPH0579183B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors

Landscapes

  • Semiconductor Integrated Circuits (AREA)
JP62088261A 1987-04-09 1987-04-09 半導体装置 Granted JPS63252458A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62088261A JPS63252458A (ja) 1987-04-09 1987-04-09 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62088261A JPS63252458A (ja) 1987-04-09 1987-04-09 半導体装置

Publications (2)

Publication Number Publication Date
JPS63252458A JPS63252458A (ja) 1988-10-19
JPH0579183B2 true JPH0579183B2 (en]) 1993-11-01

Family

ID=13937938

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62088261A Granted JPS63252458A (ja) 1987-04-09 1987-04-09 半導体装置

Country Status (1)

Country Link
JP (1) JPS63252458A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4833837B2 (ja) * 2004-06-01 2011-12-07 ローム株式会社 半導体装置および電子装置

Also Published As

Publication number Publication date
JPS63252458A (ja) 1988-10-19

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